www.irf.com 1 9/3/01 irf7474 hexfet ? power mosfet parameter max. units i d @ t a = 25c continuous drain current, v gs @ 10v 4.5 i d @ t a = 70c continuous drain current, v gs @ 10v 3.6 a i dm pulsed drain current ? 36 p d @t a = 25c power dissipation ? 2.5 w linear derating factor 0.02 w/c v gs gate-to-source voltage 20 v dv/dt peak diode recovery dv/dt ? 5.5 v/ns t j operating junction and -55 to + 150 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c absolute maximum ratings notes ? through ? are on page 8 so-8 top view 8 1 2 3 4 5 6 7 d d d d g s a s s a v dss r ds(on) max i d 100v 63 m w w w w w @v gs = 10v 4.5a symbol parameter typ. max. units r q jl junction-to-drain lead CCC 20 r q ja junction-to-ambient ? CCC 50 c/w thermal resistance l telecom and data-com 24 and 48v input dc-dc converters l motor control l uninterruptible power supply benefits applications l low on-resistance l high speed switching l low gate drive current due to improved gate charge characteristic l improved avalanche ruggedness and dynamic dv/dt l fully characterized avalanche voltage and current pd- 94097
irf7474 2 www.irf.com parameter min. typ. max. units conditions g fs forward transconductance 6.5 CCC CCC s v ds = 50v, i d = 2.7a q g total gate charge CCC 27 41 i d = 2.7a q gs gate-to-source charge CCC 10 CCC nc v ds = 50v q gd gate-to-drain ("miller") charge CCC 9.0 CCC v gs = 10v, t d(on) turn-on delay time CCC 14 CCC v dd = 50v t r rise time CCC 7.9 CCC i d = 2.7a t d(off) turn-off delay time CCC 16 CCC r g = 6.0 w t f fall time CCC 5.9 CCC v gs = 10v ? c iss input capacitance CCC 1400 CCC v gs = 0v c oss output capacitance CCC 100 CCC v ds = 25v c rss reverse transfer capacitance CCC 56 CCC pf ? = 1.0mhz c oss output capacitance CCC 380 CCC v gs = 0v, v ds = 1.0v, ? = 1.0mhz c oss output capacitance CCC 68 CCC v gs = 0v, v ds = 80v, ? = 1.0mhz c oss eff. effective output capacitance CCC 110 CCC v gs = 0v, v ds = 0v to 80v ? dynamic @ t j = 25c (unless otherwise specified) ns parameter typ. max. units e as single pulse avalanche energy ? CCC 51 mj i ar avalanche current ? CCC 2.7 a avalanche characteristics s d g parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) CCC CCC showing the i sm pulsed source current integral reverse (body diode) ? CCC CCC p-n junction diode. v sd diode forward voltage CCC CCC 1.3 v t j = 25c, i s = 2.7a, v gs = 0v ? t rr reverse recovery time CCC 45 CCC ns t j = 25c, i f = 2.7a q rr reverse recoverycharge CCC 100 CCC nc di/dt = 100a/s ? diode characteristics 2.3 36 a static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 100 CCC CCC v v gs = 0v, i d = 250a d v (br)dss / d t j breakdown voltage temp. coefficient CCC 0.11 CCC v/c reference to 25c, i d = 1ma ? r ds(on) static drain-to-source on-resistance CCC 50 63 m w v gs = 10v, i d = 2.7a ? v gs(th) gate threshold voltage 3.5 CCC 5.5 v v ds = v gs , i d = 250a CCC CCC 1.0 a v ds = 95v, v gs = 0v CCC CCC 250 v ds = 80v, v gs = 0v, t j = 150c gate-to-source forward leakage CCC CCC 100 v gs = 20v gate-to-source reverse leakage CCC CCC -100 na v gs = -20v i gss i dss drain-to-source leakage current
irf7474 www.irf.com 3 fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 4. normalized on-resistance vs. temperature -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 4.5a 0.1 1 10 100 5.0 6.0 7.0 8.0 9.0 10.0 v = 25v 20s pulse width ds v , gate-to-source volta g e (v) i , drain-to-source current (a) gs d t = 25 c j t = 175 c j 0.1 1 10 100 0.1 1 10 100 20 s pulse width t = 25 c j top bottom vgs 15v 12v 10v 8.0v 7.0v 6.5v 6.0v 5.5v v , drain-to-source volta g e (v) i , drain-to-source current (a) ds d 5.5v 1 10 100 0.1 1 10 100 20 s pulse width t = 175 c j top bottom vgs 15v 12v 10v 8.0v 7.0v 6.5v 6.0v 5.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.5v
irf7474 4 www.irf.com fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage 0 10 20 30 40 0 4 8 12 16 20 q , total gate char g e (nc) v , gate-to-source voltage (v) g gs i = d 2.7a v = 20v ds v = 50v ds v = 80v ds fig 7. typical source-drain diode forward voltage 0.1 1 10 100 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v ,source-to-drain volta g e (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j fig 8. maximum safe operating area 1 10 100 1000 v ds , drain-tosource voltage (v) 0.1 1 10 100 i d , drain-to-source current (a) tc = 25c tj = 150c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 100000 c, capacitance(pf) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd
irf7474 www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-ambient 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. 10v + - v dd 25 50 75 100 125 150 0.0 1.0 2.0 3.0 4.0 5.0 t , case temperature ( c) i , drain current (a) c d fig 9. maximum drain current vs. ambient temperature
irf7474 6 www.irf.com fig 13. on-resistance vs. gate voltage fig 12. on-resistance vs. drain current fig 14a&b. basic gate charge test circuit and waveform fig 15a&b. unclamped inductive test circuit and waveforms fig 15c. maximum avalanche energy vs. drain current d.u.t. v ds i d i g 3ma v gs .3 m f 50k w .2 m f 12v current regulator same type as d.u.t. current sampling resistors + - v gs q g q gs q gd v g charge 25 50 75 100 125 150 0 20 40 60 80 100 120 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 1.2a 2.2a 2.7a 0 20 40 60 80 100 i d , drain current (a) 0.00 0.05 0.10 0.15 0.20 0.25 0.30 r ds ( on) , drain-to-source on resistance ( w ) v gs = 10v 6.0 8.0 10.0 12.0 14.0 16.0 v gs, gate -to -source voltage (v) 0.04 0.05 0.06 0.07 r ds(on) , drain-to -source on resistance ( w ) i d = 2.7a t p v ( br ) dss i as r g i as 0.01 w t p d.u.t l v ds + - v dd driver a 15v 20v 10v
irf7474 www.irf.com 7 so-8 package details k x 45 c 8x l 8x q h 0 .25 (.01 0) m a m a 0.10 (.004) b 8x 0.2 5 (.010 ) m c a s b s - c - 6x e - b - d e - a - 8 7 6 5 1 2 3 4 5 6 5 recommended footprint 0.72 (.028 ) 8x 1.78 (.070) 8x 6.46 ( .255 ) 1.27 ( .050 ) 3 x dim inc hes m illim e ter s m in m ax m in m ax a .0532 .0688 1.35 1.75 a1 .0040 .0098 0.10 0.25 b .014 .018 0.36 0.46 c .0075 .0098 0.19 0.25 d .189 .196 4.80 4.98 e .150 .157 3.81 3.99 e .050 b asic 1.27 ba sic e1 .025 b asic 0.635 ba sic h .2284 .2440 5.80 6.20 k .011 .019 0.28 0.48 l 0.16 .050 0.41 1.27 q 0 8 0 8 notes: 1. dimensioning and tolerancing per ansi y14.5m-1982. 2. c o n t r o ll in g d im e n s io n : in c h . 3. dimensions are show n in millimeters (inches). 4. o u tl in e c o n f o r m s to je d e c o u tl in e m s -01 2a a . dimension does not include mold protrusions m o ld p r o t r u s io n s n o t to e xc e e d 0.25 (.0 06 ). d im e n s io n s is th e le n g t h o f le a d f o r s o ld e r in g t o a s u b s tr a te .. 5 6 a1 e1 q so-8 part marking
irf7474 8 www.irf.com 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are show n in millimeters ( inc hes ) . 3. outline conforms to eia-481 & eia-541. so-8 tape and reel data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on irs web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 9/01 ? repetitive rating; pulse width limited by max. junction temperature. notes: ? starting t j = 25c, l = 14mh r g = 25 w , i as = 2.7a. ? pulse width 400s; duty cycle 2%. ? when mounted on 1 inch square copper board ? c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss ? i sd 2.7a, di/dt 210a/s, v dd v (br)dss , t j 150c
|
